By H. Adam

ISBN-10: 0080121268

ISBN-13: 9780080121260

1965 Transactions of the 3rd foreign Vacuum Congress, quantity 2 provides the equipment for the epitaxial development of silicon, which uses an ultra-thin layer of a silicon alloy at the substrate floor to improve epitaxial layers at temperature as little as 750°C. This publication discusses the capability merits of the process and the mechanism of the epitaxial progress method.
Organized into 4 classes encompassing forty two chapters, this quantity starts off with an summary of the precise impact of the skinny alloy layer. this article then describes the unconventional X-ray procedure and its program to semiconductor thin-film difficulties. different chapters think of the sector of digital provider delivery in semiconductor movies with specific connection with energetic thin-film units and their normal habit. the ultimate bankruptcy bargains with the beta-ray single-scatter gauge, that are confirmed and defined in extremely simple operation.
This booklet is a invaluable source for physicists and scientists.

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1965 Transactions of the Third International Vacuum Congress: 28 Jun–2 July 1965, Stuttgart, Germany by H. Adam

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